Semiconductor Group

5

HYB 314100BJ/BJL-50/-60/-70

3.3V 4M x 1 DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 ˚C

Storage temperature range......................................................................................– 55 to + 150 ˚C

Input/output voltage ........................................................................... – 1 to + min (

V

Power Supply voltage .................................................................................................. – 1 to + 4.6 V

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

DC Characteristics

T

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

IH

2.0

V

V

1)

Input low voltage

V

IL

– 1.0

0.8

V

1)

TTL Output high voltage (

I

V

OH

2.4

–

V

1)

TTL Output low voltage (

I

V

OL

–

0.4

V

1)

CMOS Output high voltage (

I

V

OH

V

–

V

CMOS Output low voltage (

I

V

OL

–

0.2

V

Input leakage current, any input

(0 V <

V

I

I(L)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 V <

V

I

O(L)

– 10

10

µA

1)

Average

V

-50 version

-60 version

-70 version

I

CC1

_

–

–

70

60

55

mA

2) 3)4)

Standby

V

(RAS = CAS = WE =

V

I

CC2

–2mA

–

Average

V

refresh cycles

-50 version

-60 version

-70 version

I

CC3

_

–

–

70

60

55

mA

2)4)

Average

V

mode operation

-50 version

-60 version

-70 version

I

CC4

–

–

50

45

40

mA

2) 3)4)

Standby

V

(RAS = CAS = WE =

V

I

CC5

–1

200

mA

µA

1)

L-version