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NP75N04YUG-E1-AY Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NP75N04YUG-E1-AY Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS0018EJ0100 Rev.1.00 Page 1 of 6 Jul 01, 2010 Preliminary Data Sheet NP75N04YUG MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A) • Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. LEAD PLATING PACKING Package NP75N04YUG -E1-AY ∗ 1 8-pin HSON, Taping (E1 type) NP75N04YUG -E2-AY ∗ 1 Pure Sn (Tin) Tape 2500 p/reel 8-pin HSON, Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25 °C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±75 A Drain Current (pulse) ∗ 1 ID(pulse) ±225 A Total Power Dissipation (TC = 25 °C) PT1 138 W Total Power Dissipation (TA = 25 °C) ∗ 2 PT2 1.0 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Repetitive Avalanche Current ∗ 3 IAR 35 A Repetitive Avalanche Energy ∗ 3 EAR 123 mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) 1.09 °C/W Channel to Ambient Thermal Resistance ∗ 2 Rth(ch-A) 150 °C/W Notes: ∗1. TC = 25 °C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt *3. Tch(peak) ≤ 150°C, RG = 25 Ω R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 |
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