HYB3116405BJ-70 datasheet(10/26 Pages) SIEMENS

Part #	HYB3116405BJ-70

Description	3.3V 4M x 4-Bit EDO-Dynamic RAM

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

10

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

CAS precharge to RAS Delay

tRHPC

27

–

32

–

37

–

ns

Hyper Page Mode (EDO) Read-modify-Write Cycle

Hyper page mode (EDO) read-

write cycle time

tPRWC

58

–

68

–

77

–

ns

CAS precharge to WE

tCPWD

41

–

49

–

56

–

ns

CAS-before-RAS Refresh Cycle

CAS setup time

tCSR

10

–

10

–

10

–

ns

CAS hold time

tCHR

10

–

10

–

10

–

ns

RAS to CAS precharge time

tRPC

5–5

–5–

ns

Write to RAS precharge time

tWRP

10

–

10

–

10

–

ns

Write hold time referenced to RAS tWRH

10

–

10

–

10

–

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

tCPT

35

–

40

–

40

–

ns

Self Refresh Cycle

RAS pulse width

tRASS

100k

_

100k

_

100k

_

ns

17

RAS precharge

tRPS

95

_

110

_

130

_

ns

17

CAS hold time

tCHS

-50

_

-50

_

-50

_

ns

17

Test Mode

Write command setup time

tWTS

10

–

10

–

10

–

ns

Write command hold time

tWTH

10

–

10

–

10

–

ns

CAS hold time

tCHRT

30

–

30

–

30

–

ns

AC Characteristics (cont’d) 5)6)

16E

TA = 0 to 70 °C,VCC = 5 V

± 10 %, t

T = 2 ns

Parameter

Symbol

Limit Values

Unit

Note

-50

-60

-70

min.

max. min.

max.

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HYB3116405BJ-70 Datasheet(PDF) 10 Page - Siemens Semiconductor Group

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