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NE3519M04-T2 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NE3519M04-T2
Description  N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
Download  13 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3519M04-T2 Datasheet(HTML) 5 Page - Renesas Technology Corp

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NE3519M04
R09DS0008EJ0100 Rev.1.00
Page 5 of 11
Oct 21, 2010
Frequency f (GHz)
MAG, MSG, K FACTOR vs. FREQUENCY
25
20
15
10
5
0
0
2
4
6
8
1012 14161820 22 24
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS = 2 V,
ID = 10 mA
MAG
MSG
K factor
Frequency f (GHz)
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
25
20
15
10
5
0
0
2
4
6
8
1012 14161820 22 24
0
–5
–10
–15
–20
–25
VDS = 2 V,
ID = 10 mA
|S21|
2
|S12|
2
Frequency f (GHz)
MAG, MSG, K FACTOR vs. FREQUENCY
25
20
15
10
5
0
0
2
4
6
8
1012 14161820 22 24
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS = 2 V,
ID = 25 mA
MAG
MSG
K factor
Frequency f (GHz)
25
20
15
10
5
0
0
2
4
6
8
1012 14161820 22 24
0
–5
–10
–15
–20
–25
VDS = 2 V,
ID = 25 mA
|S21|
2
|S12|
2
INSERTION POWER GAIN, ISOLATION
vs. FREQUENCY
Remark The graphs indicate nominal characteristics.


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