Semiconductor Group

2

HYB3116(8)160BSJ/BST(L)-50/-60/-70

3.3V 1M x 16-DRAM

The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.

The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well

as advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard

SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system

bit densities and are compatible with commonly used automatic testing and insertion equipment.

System-oriented features include single + 3.3 V (

± 0.3 V) power supply, direct interfacing with high-

performance logic device families.The HYB3116160BSTL parts have a very low power „sleep

mode“ suppported by Self Refresh.

Ordering Information

Pin Names

Type

Ordering Code

Package

Descriptions

HYB 3116160BSJ-50

on request

P-SOJ-42 400 mil

DRAM (access time 50 ns)

HYB 3116160BSJ-60

on request

P-SOJ-42 400 mil

DRAM (access time 60 ns)

HYB 3116160BSJ-70

on request

P-SOJ-42 400 mil

DRAM (access time 70 ns)

HYB 3118160BSJ-50

on request

P-SOJ-42 400 mil

DRAM (access time 50 ns)

HYB 3118160BSJ-60

on request

P-SOJ-42 400 mil

DRAM (access time 60 ns)

HYB 3118160BSJ-70

on request

P-SOJ-42 400 mil

DRAM (access time 70 ns)

HYB 3116160BST-50

on request

P-TSOPII-50/44 400 mil

DRAM (access time 50 ns)

HYB 3116160BST-60

on request

P-TSOPII-50/44 400 mil

DRAM (access time 60 ns)

HYB 3116160BST-70

on request

P-TSOPII-50/44 400 mil

DRAM (access time 70 ns)

HYB 3118160BST-50

on request

P-TSOPII-50/44 400 mil

DRAM (access time 50 ns)

HYB 3118160BST-60

on request

P-TSOPII-50/44 400 mil

DRAM (access time 60 ns)

HYB 3118160BST-70

on request

P-TSOPII-50/44 400 mil

DRAM (access time 70 ns)

A0 to A9

Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST

A0 to A9

Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST

A0 to A11

Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST

A0 to A7

Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O16

Data Input/Output

UCAS

Upper Column Address Strobe

LCAS

Lower Column Address Strobe

WE

Read/Write Input

Power Supply (+ 3.3 V)

Ground (0 V)

N.C.

not connected