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HYB314400BJ-50- Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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HYB314400BJ-50- Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 25 page HYB 314400BJ-50/-60 3.3 V 1M × 4 DRAM Semiconductor Group 6 1998-10-01 Standby V CC supply current (RAS = CAS = WE = V CC – 0.2 V) I CC5 –1 µA 1 Average V CC supply current during CAS-before-RAS refresh mode -50 version -60 version I CC6 – – 70 60 mA 2, 4 Capacitance T A = 0 to 70 °C; VCC = 3.3 V ± 0.3 V; f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A9) C I1 –5pF Input capacitance (RAS, CAS, WE, OE) C I2 –7pF Output capacitance (IO1 to IO4) C IO –7pF DC Characteristics (cont’d) T A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values Unit Test Condition min. max. |
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