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HYB3117400BT-50 Datasheet(PDF) 10 Page - Siemens Semiconductor Group |
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HYB3117400BT-50 Datasheet(HTML) 10 Page - Siemens Semiconductor Group |
10 / 26 page Semiconductor Group 10 HYB 3116(7)400BJ/BT(L) -50/-60/-70 3.3V 4Mx4-DRAM CAS precharge to RAS Delay tRHPC 30 – 35 – 40 – ns Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time tPRWC 71 – 80 – 95 – ns CAS precharge to WE tCPWD 48 – 55 – 65 – ns CAS-before-RAS Refresh Cycle CAS setup time tCSR 10 – 10 – 10 – ns CAS hold time tCHR 10 – 10 – 10 – ns RAS to CAS precharge time tRPC 5 – 5– 5– ns Write to RAS precharge time tWRP 10 – 10 – 10 – ns Write hold time referenced to RAS tWRH 10 – 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time t CPT 35 – 40 – 40 – ns Test Mode CAS hold time t CHRT 30 – 30 – 30 – ns Write command setup time t WTS 10 – 10 – 10 – ns Write command hold time tWTH 10 – 10 – 10 – ns Self Refresh Cycle RAS pulse width tRASS 100k _ 100k _ 100k _ ns 17 RAS precharge time tRPS 95 _ 110 _ 130 _ ns 17 CAS hold time tCHS -50 _ -50 _ -50 _ ns 17 AC Characteristics (cont’d) 5)6) 16F T A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. |
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