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HYB3116160BSJ-50 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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HYB3116160BSJ-50 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 25 page  Semiconductor Group 8 HYB3116(8)160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM AC Characteristics 5)6) 16F T A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. common parameters Random read or write cycle time tRC 90 – 110 – 130 – ns RAS precharge time tRP 30 – 40 – 50 – ns RAS pulse width tRAS 50 10k 60 10k 70 10k ns CAS pulse width tCAS 13 10k 15 10k 20 10k ns Row address setup time tASR 0 – 0– 0– ns Row address hold time tRAH 8 – 10 – 10 – ns Column address setup time t ASC 0 – 0– 0– ns Column address hold time t CAH 10 – 15 – 15 – ns RAS to CAS delay time t RCD 18 37 20 45 20 50 RAS to column address delay time t RAD 13 25 15 30 15 35 ns RAS hold time tRSH 13 15 – 20 – ns CAS hold time t CSH 50 60 – 70 – ns CAS to RAS precharge time t CRP 5 – 5– 5– ns Transition time (rise and fall) t T 350 3 50 3 50 ns 7 Refresh period for HYB3118160 t REF – 16 – 16 – 16 ms Refresh period for HYB3116160 t REF – 64 – 64 – 64 ms Refresh period for L-versions t REF – 256 – 256 – 256 ms Read Cycle Access time from RAS tRAC – 50 – 60 – 70 ns 8, 9 Access time from CAS tCAC – 13 – 15 – 20 ns 8, 9 Access time from column address tAA – 25 – 30 – 35 ns 8,10 OE access time tOEA – 13 – 15 – 20 ns Column address to RAS lead time tRAL 25 – 30 – 35 – ns Read command setup time tRCS 0 – 0– 0– ns Read command hold time tRCH 0 – 0– 0– ns 11 Read command hold time referenced to RAS tRRH 0 – 0– 0– ns 11 |
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