Semiconductor Group

2

FP 212 L 100-22

Maximum ratings

Characteristics (

T

Measuring arrangements

By approaching a soft iron part close to the sensor a change in its resistance is obtained.

The potential divider circuit of the magneto resistor causes a reduction in the

temperature dependence of the output voltage

V

Parameter

Symbol

Value

Unit

Operating temperature

T

A

– 40 / + 140

°C

Storage temperature

T

stg

– 40 / + 150

°C

P

tot

450

mW

V

IN

10

V

Insulation voltage between

terminals and magnet

V

I

> 60

V

Thermal conductivity

(when soldered)

G

thA

≥ 5

mW/K

Nominal supply voltage

V

IN N

5V

Total resistance, (

R

1-3

220

…400

Ω

δ = ∞)M

≤ 10

%

(at

V

V

0

≤ 130

mV

(

V

V

out pp

> 1000

mV

Cut-off frequency

f

c

> 20

kHz

1) Corresponding to diagram

2) Corresponding to diagram

3)

4) Corresponding to measuring circuit in Fig. 2

5) Corresponding to measuring circuit in Fig. 2 and arrangement as shown in Fig. 1

M

R

12

–

R

23

–

–

----------------------------

=

R

12

–