Electronic Components Datasheet Search |
|
RJP60V0DPM Datasheet(PDF) 4 Page - Renesas Technology Corp |
|
RJP60V0DPM Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJP60V0DPM Preliminary R07DS0669EJ0100 Rev.1.00 Page 4 of 7 Feb 07, 2012 1 10 100 10000 1000 0100 50 150 200 250 300 Cies Coes Cres Gate Charge Qg (nc) Dynamic Input Characteristics (Typical) Typical Capacitance vs. Collector to Emitter Voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 VGE VCE VGE = 0 V f = 1 MHz Ta = 25°C Collector to Emitter Voltage VCE (V) IC = 22 A Ta = 25°C Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) −25 0 25 75 125 50 100 150 Junction Temparature Tj (°C) 0 2 1 3 4 VGE = 15 V Pulse Test IC = 45 A 22 A 3 A 100 80 60 40 20 0 48 12 16 610 14 Typical Transfer Characteristics Gate to Emitter Voltage VGE (V) VCE = 10 V Pulse Test 25°C 75°C 125 °C Tc = –25 °C VCC = 400 V 300 V VCC = 400 V 300 V 0 6 4 2 8 10 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) −25 0 25 75 125 50 100 150 VCE = 10 V Pulse Test Junction Temparature Tj (°C) 1 mA IC = 10 mA |
Similar Part No. - RJP60V0DPM |
|
Similar Description - RJP60V0DPM |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |