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RJP60V0DPM Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJP60V0DPM
Description  600V - 22A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP60V0DPM Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJP60V0DPM
Preliminary
R07DS0669EJ0100 Rev.1.00
Page 4 of 7
Feb 07, 2012
1
10
100
10000
1000
0100
50
150
200
250
300
Cies
Coes
Cres
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Typical Capacitance vs.
Collector to Emitter Voltage
800
600
400
200
0
0
16
12
8
4
0
20
40
60
80
100
VGE
VCE
VGE = 0 V
f = 1 MHz
Ta = 25°C
Collector to Emitter Voltage VCE (V)
IC = 22 A
Ta = 25°C
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25
0
25
75
125
50
100
150
Junction Temparature Tj (°C)
0
2
1
3
4
VGE = 15 V
Pulse Test
IC = 45 A
22 A
3 A
100
80
60
40
20
0
48
12
16
610
14
Typical Transfer Characteristics
Gate to Emitter Voltage VGE (V)
VCE = 10 V
Pulse Test
25°C
75°C
125
°C
Tc = –25
°C
VCC = 400 V
300 V
VCC = 400 V
300 V
0
6
4
2
8
10
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
−25
0
25
75
125
50
100
150
VCE = 10 V
Pulse Test
Junction Temparature Tj (°C)
1 mA
IC = 10 mA


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