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RJP60D0DPE Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJP60D0DPE
Description  Silicon N Channel IGBT High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP60D0DPE Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJP60D0DPE
Preliminary
R07DS0172EJ0100 Rev.1.00
Page 4 of 6
Nov 15, 2010
1
10
100
Gate to Emitter Voltage VGE (V)
Collector Current IC (A)
(Inductive load)
1
100
10
1000
Switching Caracteristics (Typical) (1)
Switching Caracteristics (Typical) (2)
Collector Current IC (A)
(Inductive load)
0
4
2
6
8
0
4
812
20
16
0
4
2
6
8
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Ta = 25°C
Pulse Test
IC = 22 A
45 A
1
10
100
10
1000
100
10000
VCC = 300 V, VGE = 15 V
Rg = 5
Ω, Ta = 25°C
td(off)
td(on)
tf
tr
VCC = 300 V, VGE = 15 V
Rg = 5
Ω, Ta = 25°C
Eon
Eoff
0
4
812
20
16
Ta = 150°C
Pulse Test
IC = 22 A
45 A
Switching Caracteristics (Typical) (3)
Switching Caracteristics (Typical) (4)
10
100
1000
2
5
10
20
50
10
100
1000
Gate Registance Rg (
Ω)
(Inductive load)
Gate Registance Rg (
Ω)
(Inductive load)
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25°C
td(off)
td(on)
tf
tr
2
5
10
20
50
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25°C
Eoff
Eon


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