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RJK5033DPP-M0 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK5033DPP-M0 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0205EJ0100 Rev.1.00 Page 1 of 6 Nov 29, 2010 Preliminary Datasheet RJK5033DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 0.96 typ. (at ID = 3 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 6 A Drain peak current ID (pulse) Note1 24 A Avalanche current IAP Note3 6 A Channel dissipation Pch Note 2 27.4 W Channel to case thermal Impedance ch-c 4.56 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25 C 3. STch = 25 C, Tch 150C R07DS0205EJ0100 Rev.1.00 Nov 29, 2010 |
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