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RJH6086BDPK Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH6086BDPK Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJH6086BDPK Preliminary R07DS0470EJ0100 Rev.1.00 Page 4 of 7 Sep 28, 2011 Gate Charge Qg (nC) Dynamic Input Characteristics (Typical) 800 600 400 200 0 0 16 12 8 4 0 10 20 30 40 50 IC = 45 A Ta = 25°C VGE VCE VCC = 480 V 300 V 100 V VCC = 480 V 300 V 100 V 0 20 40 60 80 100 0123 4 VGE = 0 V Ta = 25°C Pulse Test C-E Diode Forward Voltage VCEF (V) Forward Current vs. Forward Voltage (Typical) 1 10 100 1000 10000 0 50 100 150200 250 Cies Coes Cres Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C Collector to Emitter Voltage VCE (V) |
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