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CGY180 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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CGY180 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 15 page GaAs MMIC CGY 180 _________________________________________________________________________________________________________ Siemens Aktiengesellschaft pg. 1/15 21.02.96 HL EH PD 21 Datasheet * Power amplifier for DECT and PCS application * Fully integrated 3 stage amplifier * Operating voltage range: 2.7 to 6 V * Overall power added efficiency 35 % * Input matched to 50 Ω, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 180 CGY 180 Q68000-A8882 MW 12 Maximum ratings Characteristics Symbol max. Value Unit Positive supply voltage VD 8V Negative supply voltage 2)VG -8 V Supply current ID 1.2 A Maximum input power Pin,max 10 dBm Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Total power dissipation (Ts < 81 °C) Ts: Temperature at soldering point Ptot 2.3 W Pulse peak power PPulse 9.5 W Thermal Resistance Channel-soldering point RthChS ≤30 K/W 1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines 2) V G = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V |
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