RJH60D2DPP-M0_10 datasheet(2/8 Pages) RENESAS

Part #	RJH60D2DPP-M0

Description	Silicon N Channel IGBT Application: Inverter

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJH60D2DPP-M0

Preliminary

R07DS0160EJ0300 Rev.3.00

Page 2 of 7

Nov 16, 2010

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

/ Diode reverse current

ICES / IR

—

5

A

VCE = 600 V, VGE = 0

Gate to emitter leak current

IGES

—

±1

A

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

4.0

—

6.0

V

VCE = 10 V, IC = 1 mA

VCE(sat)

—

1.7

2.2

V

IC = 12 A, VGE = 15 V

Note3

Collector to emitter saturation voltage

VCE(sat)

—

2.2

—

V

IC = 25 A, VGE = 15 V

Note3

Input capacitance

Cies

—

430

—

pF

Output capacitance

Coes

—

40

—

pF

Reveres transfer capacitance

Cres

—

15

—

pF

VCE = 25 V

VGE = 0

f = 1 MHz

Total gate charge

Qg

—

19

—

nC

Gate to emitter charge

Qge

—

4

—

nC

Gate to collector charge

Qgc

—

8

—

nC

VGE = 15 V

VCE = 300 V

IC = 12 A

td(on)

—

30

—

ns

tr

—

15

—

ns

td(off)

—

90

—

ns

Switching time

tf

—

80

—

ns

VCC = 300 V, VGE = 15 V

IC = 12 A

Rg = 5



Inductive load

Short circuit withstand time

tsc

3.0

5.0

—

s

VCC  360 V, VGE = 15 V

FRD Forward voltage

VF

—

1.2

1.6

V

IF = 12 A

Note3

FRD reverse recovery time

trr

—

100

—

ns

IF = 12 A

diF/dt = 100 A/s

Notes: 3. Pulse test.

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