GaAs FET

CFY 35

________________________________________________________________________________________________________

Siemens Aktiengesellschaft

pg. 2/4

13.02.1996

HL EH PD 21

Electrical characteristics at

TA = 25°C, unless otherwise specified

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

V

DS

= 2.5 V,

V

GS

= 0 V

I

DSS

10

25

45

mA

Pinch-off voltage

V

DS

= 2.5 V

I

D

= 1 mA

V

GS(P)

-0.2

-1.2

-2.5

V

Transconductance

V

DS

= 2.5 V

I

D

= 10 mA

g

m

20

30

-

mS

Gate leakage current

V

DS

= 2.5 V

I

D

= 10 mA

I

G

-

0.1

2

µA

Noise figure

V

DS

= 2.5 V

I

D

= 10 mA

f = 12 GHz

CFY 35-20

CFY 35-23

F

-

-

1.9

2.2

2.0

2.3

dB

Associated gain

V

DS

= 2.5 V

I

D

= 10 mA

f = 12 GHz

G

a

8

8.5

-

dB

Typical Common Source Noise Parameters

I

D

= 10 mA

V

DS

= 2.5 V

Z

0

= 50

Ω

Γ

opt

G(F

GHz

dB

dB

MAG

ANG

Ω−

-dB

dB

2

0.60

17.6

0.82

32

35

0.7

0.08

2.35

12.9

4

0.83

14.2

0.73

65

25

0.5

0.11

2.30

11.2

6

1.10

11.8

0.65

105

14

0.28

0.14

2.35

9.5

8

1.38

10.5

0.60

146

5.5

0.11

0.19

2.55

7.8

10

1.64

9.4

0.58

-177

3

0.06

0.22

2.80

6.5

12

1.90

8.5

0.61

-139

10

0.2

0.28

3.50

4.9

14

2.15

7.9

0.62

-110

26

0.52

0.33

3.95

3.8