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R1LP5256ESP-7SR-B0 Datasheet(PDF) 8 Page - Renesas Technology Corp |
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R1LP5256ESP-7SR-B0 Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 15 page R1LP5256E Series R10DS0070EJ0100 Rev.1.00 Page 8 of 13 2011.04.13 Write Cycle R1LP5256E**-5S* R1LP5256E**-7S* Parameter Symbol Min. Max. Min. Max. Unit Note Write cycle time tWC 55 - 70 - ns Address valid to end of write tAW 50 - 65 - ns Chip select to end of write tCW 50 - 65 - ns 5 Write pulse width tWP 40 - 50 - ns 4 Address setup time tAS 0 - 0 - ns 6 Write recovery time tWR 0 - 0 - ns 7 Data to write time overlap tDW 25 - 30 - ns Data hold from write time tDH 0 - 0 - ns Output enable from end of write tOW 5 - 5 - ns 2 Output disable to output in high-Z tOHZ 0 20 0 25 ns 1,2 Write to output in high-Z tWHZ 0 20 0 25 ns 1,2 Note 1. tCHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and from device to device. 4. A write occurs during the overlap of a low CS#, a low WE#. A write begins at the latest transition among CS# going low and WE# going low. A write ends at the earliest transition among CS# going high and WE# going high. tWP is measured from the beginning of write to the end of write. 5. tCW is measured from the later of CS# going low to end of write. 6. tAS is measured the address valid to the beginning of write. 7. tWR is measured from the earliest of CS# or WE# going high to the end of write cycle. 8. Don’t apply inverted phase signal externally when DQ pin is output mode. |
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