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R1EX25512ATA00I Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # R1EX25512ATA00I
Description  Serial Peripheral Interface 512K EEPROM (64-Kword 횞 8-bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1EX25512ATA00I Datasheet(HTML) 4 Page - Renesas Technology Corp

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R1EX25512ASA00I/R1EX25512ATA00I
Memory cell characteristics
(VCC = 1.8 V to 5.5 V)
Ta=25
°C
Ta=85
°C
Notes
Endurance
1,000k Cycles min.
100k Cycles min.
1
Data retention
100 Years min.
10 Years min.
1
Notes: 1. Not 100
% tested
Data at shipment
 Memory array : “ 1 ” (FF Hex)
 Status register SRWD, BP0, BP1: “ 0 ”
DC Characteristics
Parameter
Symbol
Min
Max
Unit
Test conditions
Input leakage current
ILI
2
µA
VCC = 5.5 V, VIN = 0 to 5.5 V
(
S, D, C, HOLD, W)
Output leakage current
ILO
2
µA
VCC = 5.5 V, VOUT = 0 to 5.5 V
(Q)
Standby
ISB
5
µA
VIN = VSS or VCC, S = VCC
VCC = 5.5 V
3
mA
VCC = 3.3 V, Read at 5 MHz
VIN = VCC
× 0.1 / VCC × 0.9
Q = OPEN
ICC1
5
mA
VCC = 5.5 V, Read at 5 MHz
VIN = VCC
× 0.1 / VCC × 0.9
Q = OPEN
3
mA
VCC = 3.3 V, Write at 5 MHz
VIN = VCC
× 0.1 / VCC × 0.9
VCC current
Active
ICC2
5
mA
VCC = 5.5 V, Write at 5 MHz
VIN = VCC
× 0.1 / VCC × 0.9
VOL1
0.4
V
VCC = 2.5 to 5.5 V, IOL = 2 mA
VOL2
0.4
V
VCC = 1.8 to 2.5 V, IOL = 1.5 mA
VOH1
VCC
× 0.8
V
VCC = 2.5 to 5.5 V, IOH =
−2 mA
Output voltage
VOH2
VCC
× 0.8
V
VCC = 1.8 to 2.5 V, IOH=
−0.4 mA
R10DS0044EJ0100 Rev.1.00
Page 4 of 20
Oct.04, 2010


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