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NX8369TS Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # NX8369TS
Description  LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NX8369TS Datasheet(HTML) 4 Page - Renesas Technology Corp

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NX8369TS
Chapter Title
R08DS0044EJ0100 Rev.1.00
Page 4 of 7
Jun 06, 2011
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
−40 to +95
°C
Operating Case Temperature
TC
−40 to +90
°C
Forward Current of LD
IFLD
120
mA
Reverse Voltage of LD
VRLD
2
V
Forward Current of PD
IFPD
10
mA
Reverse Voltage of PD
VRPD
15
V
Soldering Temperature
(Flexible Printed Circuit)
Tsld
350 (10 sec.)
°C
Optical Output Power
Pf
5
mW
RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Bias Current
Ibias
TC = 25
°C, refer to below
Ith +22
mA
0
IF
Pf
(mW)
P1
(mA)
Ex = 10 log
[dB]
P1
P0
P0
Imod
Ibias


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