WFY

WFY

WFY

WFY5

5

5

5N0

N0

N0

N03

3

3

3

Symbol

Parameter

Value

Units

Drain Source Voltage

30

V

Continuous Drain Current

5.8

A

Drain Current Pulsed

30

A

0.25

W

Tc=75℃

0.3

Gate to Source Voltage

±8

V

ESD

ESD Capability (Note 3)

225

V

Junction and Storage Temperature

-55~150

℃

Maximum lead Temperature for soldering purposes

260

℃

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

3

3

3

30V

0V

0V

0V N

N

N

N−

−

−

−Channel

Channel

Channel

Channel MOSFET

MOSFET

MOSFET

MOSFET

Features

■ 1.4V Rated for Low Voltage Gate Drive

■ SOT-23 Surface Mount for Small Footprint

■ Single Pulse Avalanche Energy Rated

■ Halogen-free

General Description

This Power MOSFET is produced using Winsemi’s advanced

D

D

D

D

MOS technology. This latest technology has been especially

designed to minimize on-state resistance, have a high rugged

G

G

G

G

avalanche characteristics. This devices is specially well suited for

S

S

S

S

Load switching and PA switching.

SO

SO

SO

SOT

T

T

T-23

-23

-23

-23

Total Power Dissipation(Note 1)

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

Thermal Characteristics

Symbol

Parameter

Value

Units

Min

Typ

Max

Thermal Resistance, Junction-to-Ambient(Note 1)

-

-

170

℃/W

Thermal Resistance, Junction-to-Ambient(Note 1)

110

℃/W

Thermal Resistance, Junction-to-Ambient(Note 2)

300

℃/W

Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)

Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.

Note 3: ESD Rating Information: HBM Class 0

Rev. A Jun.2011

P03-3