MCM6205D

2

MOTOROLA FAST SRAM

E1

E2

G

W

Mode

VCC Current

Output

Cycle

H

X

X

X

Not Selected

ISB1, ISB2

High–Z

—

X

L

X

X

Not Selected

ISB1, ISB2

High–Z

—

L

H

H

H

Output Disabled

ICCA

High–Z

—

L

H

L

H

Read

ICCA

Dout

Read Cycle

L

H

X

L

Write

ICCA

High–Z

Write Cycle

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

– 0.5 to + 7.0

V

Voltage Relative to VSS For Any Pin

Except VCC

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current

Iout

± 20

mA

Power Dissipation

PD

1.0

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

2.2

—

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 20 ns)

** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 20 ns)

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

—

± 1

µA

Output Leakage Current (E1 = VIH or G = VIH or E2 = VIL, Vout = 0 to VCC)

Ilkg(O)

—

± 1

µA

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

Output Low Voltage (IOL = 8.0 mA)

VOL

—

0.4

V

POWER SUPPLY CURRENTS

Parameter

Symbol

– 15

– 20

– 25

Unit

AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)

ICCA

140

135

130

mA

AC Standby Current (E1 = VIH, or E2 = VIL, VCC = Max, f = fmax)

ISB1

40

40

35

mA

CMOS Standby Current (VCC = Max, f = 0 MHz, E1 ≥ VCC – 0.2 V or

E2

≤ VSS + 0.2 V, Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V)

ISB2

20

20

20

mA

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to this high–impedance

circuit.

This CMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear

feet per minute is maintained.