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WFW064N Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFW064N Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance W W W WF F F FW064N W064N W064N W064N 2/7 Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Typ Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=55V,VGS=0V - - 25 µA VDS=44V,VGS=0V,TJ=125℃ - - 250 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 60 - - V Breakdown voltage Temperature Coefficient △BVDSS/ △TJ ID=1mA, Referenced to 25℃ - 0.057 - V/℃ Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=55A - - 8.0 mΩ Forward Transconductance gfs VDS=25V,ID=55A 44 - - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 3980 - pF Reverse transfer capacitance Crss - 470 - Output capacitance Coss - 1290 - Switching time Rise time tr VDD=28V, ID=55A RG=2.5Ω VGS=10V (Note4,5) - 100 - ns Turn-on Delay time Td(on) - 14 - Fall time tf - 70 - Turn-off Delay time Td(off) - 43 - Total gate charge(gate-source plus gate-drain) Qg VDS=44V, ID=55A VGS=10V, (Note4,5) - 170 nC Gate-source charge Qgs - 32 Gate-drain("miller") Charge Qgd - 74 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 109 A Pulse drain reverse current IDRP - - - 390 A Forward voltage(diode) VDSF IDR=1A,VGS=0V - - 1.2 V Reverse recovery time trr IDR=55A,TJ=25℃ dIDR / dt =100 A / µs - 100 170 ns Reverse recovery charge Qrr - 450 680 µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=190uH IAS=55A,,RG=25Ω,Starting TJ=25℃ 3.ISD≤55A,di/dt≤290A/us,VDD<BVDSS, TJ≤150℃ 4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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