NP90N055VUK-E2-AY datasheet(5/8 Pages) RENESAS

Part #	NP90N055VUK-E2-AY

Description	MOS FIELD EFFECT TRANSISTOR

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 8 page

NP90N055VUK

R07DS0578EJ0100 Rev.1.00

Page 5 of 6

Nov 29, 2011

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

100

1000

10000

0.1

1

10

100

VDS - Drain to Source Voltage - V

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

1

10

100

0.1

1

10

100

IF - Drain Current - A

SWITCHING CHARACTERISTICS

1

10

100

1000

0.1

1

10

100

ID - Drain Current - A

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

0

5

10

15

25

35

45

55

20

30

40

50

0

1

2

3

5

7

9

11

4

6

8

10

0

10203040506070

QG- Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

0.1

1

10

100

1000

0

0.2

0.4

0.6

0.8

1.0

1.2

VF(S-D) - Source to Drain Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

–100

–50

0

50

100

150

200

Tch - Channel Temperature - °C

di/dt = 100 A/

μs

VGS = 0 V

VDD = 20 V

VGS = 10 V

RG = 0 Ω

0

2

4

8

1

3

6

7

5

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

td(off)

td(on)

tr

tf

VGS = 10 V

ID = 45 A

Pulsed

VDD = 44 V

28 V

12 V

VGS

VDS

ID = 90 A

VGS = 10 V

VGS = 0 V

Pulsed

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NP90N055VUK-E2-AY Datasheet(PDF) 5 Page - Renesas Technology Corp

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