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NP89N04MUK Datasheet(PDF) 6 Page - Renesas Technology Corp |
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NP89N04MUK Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 8 page NP89N04MUK, NP89N04NUK R07DS0599EJ0100 Rev.1.00 Page 6 of 6 Jan 11, 2012 Package Drawing (Unit: mm) TO-220 (MP-25K) (Mass: 1.9 g TYP.) 10.0 ±0.2 3.8 ±0.2 4.45 ±0.2 1.3 ±0.2 1.27 ±0.2 0.8 ±0.1 0.5 ±0.2 2.5 ±0.2 2.54 TYP. 2.54 TYP. 1 4 23 1. Gate 2. Drain 3. Source 4. Fin (Drain) TO-262 (MP-25SK) (Mass: 1.8 g TYP.) 10.0 ±0.2 4.45 ±0.2 1.3 ±0.2 1.27 ±0.2 0.8 ±0.1 0.5 ±0.2 2.5 ±0.2 2.54 TYP. 2.54 TYP. 1 4 23 1. Gate 2. Drain 3. Source 4. Fin (Drain) Equivalent Circuit Source Body Diode Gate Drain Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
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