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NP75P03YDG-E1-AY Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # NP75P03YDG-E1-AY
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP75P03YDG-E1-AY Datasheet(HTML) 4 Page - Renesas Technology Corp

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NP75P03YDG
Chapter Title
R07DS0020EJ0200 Rev.2.00
Page 4 of 6
Mar 16, 2011
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-0
-50
-100
-150
-200
-250
-300
-0
-1
-2
-3
-4
VGS =
−10 V
Pulsed
−5 V
VDS - Drain to Source Voltage - V
-0.001
-0.01
-0.1
-1
-10
-100
-1000
-1
-2
-3
-4
-5
VDS =
−10 V
Pulsed
25
°C
75
°C
125
°C
TA =
−55°C
150
°C
175
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
-2
-1.6
-1.2
-0.8
-0.4
0
-100
0
100
200
VDS = VGS
ID =
−250 μA
Tch - Channel Temperature -
°C
1
10
100
-0.1
-1
-10
-100
VDS =
−5 V
Pulsed
TA =
−55°C
25
°C
75
°C
125
°C
175
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
5
10
15
20
25
30
-0.1
-1
-10
-100
-1000
VGS =
−5 V
Pulsed
−10 V
ID - Drain Current - A
0
5
10
15
20
-0
-5
-10
-15
-20
ID =
−75 A
−37.5 A
−15 A
Pulsed
VGS - Gate to Source Voltage - V


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