NP55N04SLG-E1-AY datasheet(1/8 Pages) RENESAS

Part #	NP55N04SLG-E1-AY

Description	MOS FIELD EFFECT TRANSISTOR

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0242EJ0100 Rev.1.00

Page 1 of 6

Feb 23, 2011

Preliminary Data Sheet

NP55N04SLG

MOS FIELD EFFECT TRANSISTOR

Description

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Channel temperature 175 degree rating

• Super low on-state resistance

⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)

⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)

⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)

• Low input capacitance

• Gate to Source ESD protection diode built-in

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

NP55N04SLG-E1-AY ∗

1

NP55N04SLG-E2-AY ∗

1

Pure Sn (Tin)

Tape 2500 p/reel

TO-252 (MP-3ZK)

Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (TA = 25

°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±55

A

Drain Current (pulse) ∗

1

ID(pulse)

±220

A

Total Power Dissipation (TC = 25

°C)

PT1

77

W

Total Power Dissipation (TA = 25

°C)

PT2

1.2

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Repetitive Avalanche Current ∗

2

IAR

30

A

Repetitive Avalanche Energy ∗

2

EAR

90

mJ

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-C)

1.95

°C/W

Channel to Ambient Thermal Resistance ∗2

Rth(ch-A)

125

°C/W

Notes: ∗1. PW

≤ 10

μs, Duty Cycle ≤ 1%

∗2. Starting Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V

R07DS0242EJ0100

Rev.1.00

Feb 23, 2011

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