NP50P04SLG-E1-AY datasheet(4/8 Pages) RENESAS

Part #	NP50P04SLG-E1-AY

Description	MOS FIELD EFFECT TRANSISTOR

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 8 page

NP50P04SLG

Chapter Title

R07DS0241EJ0100 Rev.1.00

Page 4 of 6

Feb 09, 2011

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

-0

-20

-40

-60

-80

-100

-120

-140

-160

-180

-200

0

-1-2

-3-4

VGS =

−10 V

−5.0 V

−4.5 V

Pulsed

VDS - Drain to Source Voltage - V

-0.0001

-0.001

-0.01

-0.1

-1

-10

-100

-1000

0

-0.5

-1

-1.5

-2

-2.5

-3

-3.5

VDS =

−10 V

Pulsed

Tch =

−55°C

−25°C

25°C

75°C

125°C

150°C

175°C

100°C

VGS - Gate to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-75

-25

25

75

125

175

Pulsed

VDS = VGS

ID =

−250 μA

Tch - Channel Temperature -

°C

0.0001

0.001

0.01

0.1

1

10

100

0.0001

0.001

0.01

0.1

1

10

100

VDS =

−10 V

Pulsed

Tch

= −55°C

−25°C

25°C

75°C

175°C

150°C

125°C

100°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0

2

4

6

8

10

12

14

16

18

20

-1

-10

-100

-1000

−5.0 V

VGS =

−10 V

−4.5 V

Pulsed

ID - Drain Current - A

0

5

10

15

20

25

30

35

40

0

-5

-10

-15

-20

-25

ID =

−50 A

−25 A

−10 A

Pulsed

VGS - Gate to Source Voltage - V

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