Electronic Components Datasheet Search |
|
HITJ0302MP Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
HITJ0302MP Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0477EJ0100 Rev.1.00 Page 1 of 6 Jun 22, 2011 Preliminary Datasheet HITJ0302MP Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 138 m typ (VGS = –10 V, ID = –1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 1 3 1 2 3 Note: Marking is “NG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS +10 / –20 V Drain current ID –2.2 A Drain peak current ID(Pulse) Note1 –5 A Body - drain diode reverse drain current IDR –2.2 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0477EJ0100 Rev.1.00 Jun 22, 2011 |
Similar Part No. - HITJ0302MP |
|
Similar Description - HITJ0302MP |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |