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HITJ0302MP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HITJ0302MP Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  R07DS0477EJ0100 Rev.1.00 Page 1 of 6 Jun 22, 2011 Preliminary Datasheet HITJ0302MP Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 138 m typ (VGS = –10 V, ID = –1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 1 3 1 2 3 Note: Marking is “NG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS +10 / –20 V Drain current ID –2.2 A Drain peak current ID(Pulse) Note1 –5 A Body - drain diode reverse drain current IDR –2.2 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0477EJ0100 Rev.1.00 Jun 22, 2011 |
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