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BCR40RM-12LB Datasheet(PDF) 2 Page - Renesas Technology Corp |
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BCR40RM-12LB Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page BCR40RM-12LB Preliminary R07DS0516EJ0100 Rev.1.00 Page 2 of 7 Oct 14, 2011 Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 40 A Commercial frequency, sine full wave 360°conduction, Tc = 61 C Note3 Surge on-state current ITSM 400 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I 2t for fusion I 2t 667 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction Temperature Tj –40 +150 C Storage temperature Tstg –40 +150 C Mass — 5.2 g Typical value Isolation voltage Viso 2000 V Ta=25 , AC 1 minute T1 T2 G terminal to case Electrical Characteristics Parameter Symb ol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current IDRM — — 10.0 mA Tj = 150 C, V DRM applied On-state voltage VTM — — 1.55 V Tc = 25 C, I TM = 60A, instantaneous measurement VFGT — — 2.5 V VRGT — — 2.5 V Gate trigger voltage Note2 VRGT — — 2.5 V Tj = 25 C, V D = 6 V, RL = 6 , RG = 330 IFGT — — 50 mA IRGT — — 50 mA Gate trigger curent Note2 IRGT — — 50 mA Tj = 25 C, V D = 6 V, RL = 6 , RG = 330 Gate non-trigger voltage VGD 0.2 — — V Tj = 125 C, V D = 1/2 VDRM 0.1 Tj = 150 C, V D = 1/2 VDRM Thermal resistance Rth (j-c) — — 1.8 C/W Junction to case Note3 Critical-rate of rise of off-state (dv/dt)c 20 — — V/ s Tj = 125 C commutation voltage Note4 2 — — V/ s Tj = 150 C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj = 125/150 C 2.Rate of decay of on-state commutating current (di/dt)c =-20 A/ms 3.Peak off-state voltage VD = 400 V Supply Voltage Time Time Time Main Current Main Voltage (di/dt)c VD (dv/dt)c |
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