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2SK1152L-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK1152L-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0397EJ0300 Rev.3.00 Page 1 of 6 May 16, 2011 Preliminary Datasheet 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) D G S 1 2 3 4 1 2 3 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 2SK1151 450 Drain to source voltage 2SK1152 VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 1.5 A Drain peak current ID(pulse)* 1 6 A Body to drain diode reverse drain current IDR 1.5 A Channel dissipation Pch* 2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at TC = 25°C R07DS0397EJ0300 (Previous: REJ03G0907-0200) Rev.3.00 May 16, 2011 |
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