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BUZ91A Datasheet(PDF) 8 Page - Siemens Semiconductor Group

Part No. BUZ91A
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
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 8 page
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Semiconductor Group
8
07/96
BUZ 91 A
Avalanche energy
E
AS = ƒ(Tj)
parameter:
ID = 8 A, VDD = 50 V
R
GS = 25 Ω, L = 16.3 mH
20
40
60
80
100
120
°C
160
T
j
0
50
100
150
200
250
300
350
400
450
500
mJ
600
E
AS
Typ. gate charge
VGS = ƒ(QGate)
parameter:
I
D puls = 12 A
0
20
40
60
80
100
130
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
-60
-20
20
60
100
°C
160
T
j
540
560
580
600
620
640
660
680
V
710
V
(BR)DSS



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