BUZ73A datasheet(8/9 Pages) SIEMENS

Part #	BUZ73A

Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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8 / 9 page

Semiconductor Group

8

07/96

BUZ 73 A

Avalanche energy

E

AS = ƒ(Tj)

parameter:

ID = 7 A, VDD = 50 V

R

GS = 25 Ω, L = 3.67 mH

20

40

60

80

100

120

°C

160

T

j

0

10

20

30

40

50

60

70

80

90

100

110

mJ

130

E

AS

Typ. gate charge

VGS = ƒ(QGate)

parameter:

I

D puls = 14 A

0

4

8

12

16

20

24

28

32 nC 38

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

-60

-20

20

60

100

°C

160

T

j

180

185

190

195

200

205

210

215

220

225

230

V

240

V

(BR)DSS

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BUZ73A Datasheet(PDF) 8 Page - Siemens Semiconductor Group

BUZ73A Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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