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MA4AGSBP Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc. |
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MA4AGSBP Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc. |
3 / 10 page PIN Diodes for Microwave Switch Designs Rev. V2 AN3021 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Table 2: Relative PIN Diode Performance Evaluation Matrix Surface Mount Assembly Key Parameter Plastic MELF or Hi- Pax SURMOUNT Cerma Chip Flip Chip Beam Lead 1 MHz < F < 1 GHz Best Selection 100 MHz < F < 4 GHz Best Selection 4 GHz < F < 20 GHz Best Selection 20 GHz < F < 60 GHz Best Selection Best Selection 100 MHz < F < 20 GHz Best Selection Pinc < 0.1 W Best Selection 0.1 W < Pinc < 1 W Best Selection Best Selection 1 W < Pinc < 20 W Best Selection 20 W < Pinc < 200 W Best Selection Best Selection Relative Cost Index Lowest Moderate/Highest Moderate/Highest Lowest Moderate Highest Chip & Wire Hybrid Assembly Conclusions: 1. Plastic Devices are best suited where Cost is a decision driver, the Operating Frequency < 4 GHz, and the RF C.W. Incident Power < 1 W ( + 30 dBm ). 2. MELF or HIPAX Ceramic Devices are best utilized where Highest Average Power ( > 20 W C.W. ) is the Primary Design Goal and the Operating Frequency < 1 GHz. 3. SURMOUNT Devices are probably the Best Overall Compromise in Device Selection. They can Operate ( In Various bands ) from 10 MHz – 20 GHz and Perform well with RF Incident Power < 20 W C.W ( + 43 dBm ). 4. Cermachip Devices provide the Best Overall Performance for Operating Frequeny ( 100 MHz – 20 GHz ) , and RF Incident Power < 200 W C.W (+ 53 dBm ). 5. Flip Chip Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. < 1W ( + 30 dBm ) and Conductive Epoxy or Soldering is Required. 6. Beam Lead Devices are best suited for mmwave Frequencies < 60 GHz, where the RF Incident C.W. < 0.1W ( + 20 dBm ) and Thermo Compression Bonding is Required. |
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