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AG314 Datasheet(PDF) 5 Page - M/A-COM Technology Solutions, Inc. |
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AG314 Datasheet(HTML) 5 Page - M/A-COM Technology Solutions, Inc. |
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5 / 70 page  • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 Principles, Applications and Selection of Receiving Diodes Rev. V1 AG314 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Figure 1b shows the effect of a net negative surface charge on the semiconductor. The Fermi level remains a straight, horizontal line as required by equilibrium. The effect of the surface charge is to bend the energy level of the valence and conduction bands near the semiconductor surface. Thus, the effect of surface charge is to alter the energy levels at the semiconductor surface. Figure 1. Energy-Level Diagrams vs. Distance for Metal and Semiconductor Surfaces in Isolated Equilibrium A Schottky barrier is formed when materials such as Figures 1a and 1b are brought into direct contact. The Fermi level or chemical potential of the materials must remain constant across the junction or interface at zero bias. Initially when the metal and semiconductors are brought into contact, their Fermi levels are not equal. There will be a net current transport from one material to the other. Then a potential barrier will form between the materials to make the carrier flow in each direction equal so that the net current is zero. In this condition the two materials are in ther- mal and charge equilibrium and the Fermi level is continuous across the junction. The result of this effect is a Schottky barrier junction. Vacuum (energy of free electron) 0 Distance into metal 0 Distance into semiconductor eψS eχ WC WF WV WF eψM ΔWF Electron Energy Fig. 1a Fig. 1b |
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