KGT25N120NDA datasheet(2/8 Pages) KEC

Part #	KGT25N120NDA

Description	SEMICONDUCTOR TECHNICAL DATA

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 8 page

2009. 10. 29

2/8

KGT25N120NDA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Collector-Emitter Breakdown Voltage

BVCES

VGE=0V , IC=1mA

1200

-

V

Collector Cut-off Current

ICES

VGE=0V, VCE=1200V

-

1.0

mA

Gate Leakage Current

IGES

VCE=0V, VGE=±20V

-

±100

nA

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC=25mA

4.0

5.5

7.0

V

Collector-Emitter Saturation Voltage

VCE(sat)

VGE=15V, IC=25A

-

1.95

2.30

V

VGE=15V, IC=25A, TC = 125℃

-

2.25

-

V

VGE=15V, IC=50A

-

2.50

-

V

Dynamic

Total Gate Charge

Qg

VCC=600V, VGE=15V, IC= 25A

-

200

300

nC

Gate-Emitter Charge

Qge

-

20

-

nC

Gate-Collector Charge

Qgc

-

80

-

nC

Turn-On Delay Time

td(on)

VCC=600V, IC=25A, VGE=15V,RG=10Ω

Inductive Load, TC = 25℃

-

60

-

ns

Rise Time

tr

-

50

-

ns

Turn-Off Delay Time

td(off)

-

290

-

ns

Fall Time

tf

-

100

-

ns

Turn-On Switching Loss

Eon

-

4.1

6.1

mJ

Turn-Off Switching Loss

Eoff

-

0.86

1.4

mJ

Total Switching Loss

Ets

-

4.96

7.5

mJ

Turn-On Delay Time

td(on)

VCC=600V, IC=25A, VGE=15V, RG=10Ω

Inductive Load, TC = 125℃

-

60

-

ns

Rise Time

tr

-

50

-

ns

Turn-Off Delay Time

td(off)

-

300

-

ns

Fall Time

tf

-

150

-

ns

Turn-On Switching Loss

Eon

-

4.3

6.3

mJ

Turn-Off Switching Loss

Eoff

-

1.2

2.1

mJ

Total Switching Loss

Ets

-

5.5

8.4

mJ

Input Capacitance

Cies

VCE=30V, VGE=0V, f=1MHz

-

3100

-

pF

Ouput Capacitance

Coes

-

100

-

pF

Reverse Transfer Capacitance

Cres

-

80

-

pF

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