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SEMICONDUCTOR

TECHNICAL DATA

KGT25N120KDA

Revision No : 0

General Description

KEC NPT Trench IGBTs offer low switching losses, high energy

efficiency and short circuit ruggedness.

It is designed for applications such as motor control, uninterrupted power

supplies(UPS), general inverters.

FEATURES

・High speed switching

・High system efficiency

・Short Circuit Withstand Times ≻10us

・Extremely enhanced avalanche capability

MAXIMUM RATING (Ta=25

℃)

*Repetitive rating : Pulse width limited by max. junction temperature

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Emitter Voltage

1200

V

Gate-Emitter Voltage

±20

V

Collector Current

@Tc=25

℃

50

A

@Tc=100

℃

25

A

Pulsed Collector Current

90

A

Diode Continuous Forward Current

@Tc=100

℃

25

A

Diode Maximum Forward Current

150

A

Maximum Power Dissipation

@Tc=25

℃

310

W

@Tc=100

℃

125

W

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55 to + 150

℃

CHARACTERISTIC

SYMBOL

MAX.

UNIT

Thermal Resistance, Junction to Case (IGBT)

0.4

℃/W

Thermal Resistance, Junction to Case (DIODE)

2.8

℃/W

Thermal Resistance, Junction to Ambient

40

℃/W

THERMAL CHARACTERISTIC

G

C

E

E

C

G

A

MILLIMETERS

DIM

B

C

D

E

F

G

H

I

J

K

O

Q

M

Max. 4.50

R

S

15.90

0.30

+

_

5.00

0.20

+

_

20.85

0.30

+

_

3.00

0.20

+

_

2.00

0.20

+

_

1.20

0.20

+

_

20.10

0.70

+

_

0.60

0.02

+

_

2.00

0.10

+

_

14.70

0.20

+

_

2.40

0.20

+

_

P

5.45

0.30

+

_

3.60

0.30

+

_

3.60

0.20

+

_

7.19

0.10

+

_

S

M

K

B

I

123

O

D

E

F

PP

TO-247

A