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WFF7N60 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFF7N60 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
2 / 7 page WFF7N60 WFF7N60 WFF7N60 WFF7N60 2/7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance Electrical Characteristics(Tc=25℃) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS=±30V,VDS=0V - - ±100 nA Gate-source breakdown voltage V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V Drain cut -off current IDSS VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - 100 µA Drain -source breakdown voltage V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.5A - 0.8 1.2 Ω Forward Transconductance gfs VDS=50V,ID=3.5A - 8.7 - S Input capacitance Ciss VDS=25V, VGS=0V, f=1MHz - 1100 1430 pF Reverse transfer capacitance Crss - 15 20 Output capacitance Coss - 135 175 Switching time Rise time tr VDD=200V, ID=7.0A, RG=25Ω, (Note4,5) - 30 70 ns Turn-on time ton - 80 170 Fall time tf - 65 140 Turn-off time toff - 60 130 Total gate charge(gate-source plus gate-drain) Qg VDD=480V, VGS=10V, ID=7.0A (Note4,5) - 29 38 nC Gate-source charge Qgs - 7 - Gate-drain("miller") Charge Qgd - 14.5 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 7.0 A Pulse drain reverse current IDRP - - - 28 A Forward voltage(diode) VDSF IDR=7.4A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=7.4A,VGS=0V, dIDR / dt =100 A / µs - 320 - ns Reverse recovery charge Qrr - 2.4 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=7A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤7.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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Similar Description - WFF7N60 |
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