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WFF7N60 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # WFF7N60
Description  Silicon N-Channel MOSFET
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

WFF7N60 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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WFF7N60
WFF7N60
WFF7N60
WFF7N60
2/7
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
IDSS
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=3.5A
-
0.8
1.2
Forward Transconductance
gfs
VDS=50V,ID=3.5A
-
8.7
-
S
Input capacitance
Ciss
VDS=25V,
VGS=0V,
f=1MHz
-
1100
1430
pF
Reverse transfer capacitance
Crss
-
15
20
Output capacitance
Coss
-
135
175
Switching time
Rise time
tr
VDD=200V,
ID=7.0A,
RG=25Ω,
(Note4,5)
-
30
70
ns
Turn-on time
ton
-
80
170
Fall time
tf
-
65
140
Turn-off
time
toff
-
60
130
Total gate charge(gate-source
plus gate-drain)
Qg
VDD=480V,
VGS=10V,
ID=7.0A
(Note4,5)
-
29
38
nC
Gate-source charge
Qgs
-
7
-
Gate-drain("miller") Charge
Qgd
-
14.5
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
7.0
A
Pulse drain reverse current
IDRP
-
-
-
28
A
Forward voltage(diode)
VDSF
IDR=7.4A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.4A,VGS=0V,
dIDR / dt =100 A / µs
-
320
-
ns
Reverse recovery charge
Qrr
-
2.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH IAS=7A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤7.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution


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