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BUZ111SL Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BUZ111SL Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 8 page Semiconductor Group 7 28/Jan/1998 BUZ111SL SPP80N05L Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 80 A, VGS = 4.5 V -60 -20 20 60 100 °C 180 T j 0.000 0.004 0.008 0.012 0.016 0.020 0.024 Ω 0.032 R DS (on) typ 98% Gate threshold voltage VGS(th)= f (Tj) parameter:VGS=VDS,ID = 240µA -60 -20 20 60 100 140 V 200 T j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V 3.0 V GS(th) min typ max Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 VDS -2 10 -1 10 0 10 1 10 nF C Ciss Coss Crss Forward characteristics of reverse diode I F = ƒ(VSD) parameter: T j, tp = 80 µs 0 10 1 10 2 10 3 10 A I F 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V SD T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
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