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BUZ100L Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part # BUZ100L
Description  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ100L Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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Semiconductor Group
4
07/96
BUZ 100L
Electrical Characteristics, at
Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS
-
-
60
A
Inverse diode direct current,pulsed
TC = 25 °C
ISM
-
-
240
Inverse diode forward voltage
VGS = 0 V, IF = 120 A
VSD
-
1.15
1.8
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
trr
-
85
-
ns
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr
-
130
-
µC


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