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SBP13005D Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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SBP13005D Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 4 page  SBP13005D SBP13005D SBP13005D SBP13005D Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. High High High High Voltage Voltage Voltage Voltage Fast-Switching Fast-Switching Fast-Switching Fast-Switching NPN NPN NPN NPN Power Power Power Power Transistor Transistor Transistor Transistor Features Features Features Features ◆ Very High Switching Speed ◆ Minimum Lot-to-Lot hFE Variation ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling diode General General General General Description Description Description Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Absolute Absolute Absolute Maximum Maximum Maximum Maximum Ratings Ratings Ratings Ratings S S S Sy y y ymbol mbol mbol mbol Par Par Par Para a a amet met met mete e e errrr T T T Tes es es estttt Condi Condi Condi Condittttiiiio o o ons ns ns ns V V V Va a a alue lue lue lue Units Units Units Units VCES Collector-Emitter Voltage VBE = 0 700 700 700 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 4.0 A ICP Collector pulse Current 8.0 A IB Base Current 2.0 A IBM Base Peak Current tP = 5ms 4.0 A PC Total Dissipation at TC = 25℃ 75 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Thermal Thermal Thermal Thermal Chara Chara Chara Charac c c cteri teri teri teris s s stics tics tics tics S S S Sy y y ymbol mbol mbol mbol Par Par Par Para a a amet met met mete e e errrr V V V Value alue alue alue Units Units Units Units RθJC Thermal Resistance Junction to Case 1.67 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W Jan 2009. Rev. 0 |
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