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2N5194 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # 2N5194
Description  PNP SILICON POWER TRANSISTORS
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2N5194 Datasheet(HTML) 1 Page - Central Semiconductor Corp

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MAXIMUM RATINGS: (TA=25°C)
SYMBOL
2N5193
2N5194
2N5195
UNITS
Collector-Base Voltage
VCBO
40
60
80
V
Collector-Emitter Voltage
VCEO
40
60
80
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
4.0
A
Base Current
IB
1.0
A
Power Dissipation (TC=25°C)
PD
40
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance (Junction to Case)
ΘJC
3.12
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=Rated VCBO
100
μA
ICEX
VCE=Rated VCEO, VEB=1.5V
100
μA
ICEO
VCE=Rated VCEO
1.0
mA
IEBO
VEB=5.0V
1.0
mA
BVCEO
IC=100mA (2N5193)
40
V
BVCEO
IC=100mA (2N5194)
60
V
BVCEO
IC=100mA (2N5195)
80
V
VCE(SAT)
IC=1.5A, IB=150mA
0.6
V
VCE(SAT)
IC=4.0A, IB=1.0A
1.4
V
VBE(ON)
VCE=2.0V, IC=1.5A
1.2
V
hFE
VCE=2.0V, IC=1.5A (2N5193, 2N5194)
25
100
hFE
VCE=2.0V, IC=1.5A (2N5195)
20
80
hFE
VCE=2.0V, IC=4.0A (2N5193, 2N5194)
10
hFE
VCE=2.0V, IC=4.0A (2N5195)
7.0
fT
VCE=10V, IC=1.0A, f=1.0MHz
2.0
MHz
2N5193
2N5194
2N5195
PNP SILICON
POWER TRANSISTORS
TO-126 CASE
Central
Semiconductor Corp.
TM
R1 (10-February 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5193 Series
types are Silicon PNP Power Transistors, manufactured
by the epitaxial base process, designed for medium
power amplifier and switching applications.
These devices are complementary to the NPN 2N5190
Series types.
MARKING: FULL PART NUMBER


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