2N3637

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3637 is a PNP

Silicon Transistor, mounted in a hermetically sealed

TO-39 package, designed for general purpose amplifier

and high voltage switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

175

V

Collector-Emitter Voltage

VCEO

175

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation

PD

1.0

W

Power Dissipation (TC=25°C)

PD

5.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

175

°C/W

Thermal Resistance

ΘJC

35

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=100V

100

nA

IEBO

VEB=3.0V

50

nA

BVCBO

IC=100μA

175

V

BVCEO

IC=10mA

175

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.3

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.5

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.8

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.65

0.9

V

hFE

VCE=10V, IC=0.1mA

80

hFE

VCE=10V, IC=1.0mA

90

hFE

VCE=10V, IC=10mA

100

hFE

VCE=10V, IC=50mA

100

300

hFE

VCE=10V, IC=150mA

50

fT

VCE=30V, IC=30mA, f=100MHz

200

MHz

Cob

VCB=20V, IE=0, f=1.0MHz

10

pF

Cib

VEB=1.0V, IC=0, f=1.0MHz

75

pF

ton

VCC=100V, VBE=4.0V, IC=50mA,

IB1=IB2=5.0mA

400

ns

toff

VCC=100V, VBE=4.0V, IC=50mA,

IB1=IB2=5.0mA

600

ns

TO-39 CASE

R0 (22-November 2010)

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