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2N1776A Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. 2N1776A
Description  SILICON CONTROLLED RECTIFIER 8 AMP, 100 THRU 400 VOLTS
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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2N1772A
2N1774A
2N1776A
2N1777A
SILICON CONTROLLED RECTIFIER
8 AMP, 100 THRU 400 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1772A Series
types are reverse blocking triode thyristors, designed
for use in low power switching and phase control
applications requiring blocking voltages up to 400 volts,
and RMS load currents up to 8 amps.
MARKING: FULL PART NUMBER
TO-64 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
2N1772A 2N1774A 2N1776A 2N1777A UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
100
200
300
400
V
Peak Non-Repetitive Off-State Voltage
VDRM, VRRM
150
300
400
500
V
Peak Forward Voltage
VFM
480
V
Peak Gate Voltage
VGFM, VGRM
10
V
RMS On-State Current
IT(RMS)
8.0
A
Average On-State Current (TC=105°C)
IO
4.7
A
Peak Forward Gate Current
IGFM
2.0
A
Peak Forward Surge Current
IFSM
60
A
I2t Value for Fusing, tp=8.3ms
I2t
15
A2s
Peak Gate Power Dissipation
PGM
5.0
W
Average Gate Power Dissipation
PG(AV)
0.5
W
Operating and Storage Junction Temperature
TJ, Tstg
–40 to +150
°C
Thermal Resistance
Θ
JC
3.1
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IDRM, IRRM
VDRM, VRRM=100V
9.0
mA
IDRM, IRRM
VDRM, VRRM=200V
6.0
mA
IDRM, IRRM
VDRM, VRRM=300V
4.0
mA
IDRM, IRRM
VDRM, VRRM=400V
2.0
mA
IGT
VAK=12V, RL=250Ω
15
mA
VGT
VAK=12V, RL=250Ω
2.0
V
VTM
IT=15A
1.85
V
IH
IT=100mA
25
mA
R1 (16-March 2011)
www.centra lsemi.com




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