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2N2221A Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. 2N2221A
Description  NPN SILICON TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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2N2221A
2N2222A
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A and
2N2222A types are silicon NPN epitaxial planar
transistors designed for small signal, general purpose
switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
800
mA
Power Dissipation
PD
400
mW
Power Dissipation (TC=25°C)
PD
1.2
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJA
438
°C/W
Thermal Resistance
ΘJC
146
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=150°C
10
μA
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10μA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
2N2221A
2N2222A
MIN
MAX
MIN
MAX
hFE
VCE=10V, IC=0.1mA
20
-
35
-
hFE
VCE=10V, IC=1.0mA
25
-
50
-
hFE
VCE=10V, IC=10mA
35
-
75
-
hFE
VCE=10V, IC=10mA, TA=-55°C
15
-
35
-
hFE
VCE=10V, IC=150mA
40
120
100
300
hFE
VCE=1.0V, IC=150mA
20
-
50
-
hFE
VCE=10V, IC=500mA
25
-
40
-
TO-18 CASE
R3 (30-January 2012)
www.centr a lsemi.com




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