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BTS707 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BTS707 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 12 page BTS 707 Semiconductor Group 8 GND disconnect PROFET V IN ST OUT GND bb V bb V IN V ST V GND Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. GND disconnect with GND pull up PROFET V IN ST OUT GND bb V bb V GND V IN V ST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with energized inductive load PROFET V IN ST OUT GND bb V bb high For an inductive load current up to the limit defined by EAS (max. ratings ) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load the whole load current flows through the GND connection. Inductive load switch-off energy dissipation PROFET V IN ST OUT GND bb = E E E E AS bb L R ELoad R L L {L Z Energy stored in load inductance: EL = 1/2·L·I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L 2·RL (Vbb + |VOUT(CL)|) ln (1+ IL·RL |VOUT(CL)| ) |
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