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BTS650P Datasheet(PDF) 4 Page - Siemens Semiconductor Group

Part # BTS650P
Description  Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS650P Datasheet(HTML) 4 Page - Siemens Semiconductor Group

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BTS650P
Semiconductor Group
Page 4
1998-Nov.-2
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see diagram on page 10
Tj = 150 °C:
RON(inv)
--
4.4
7.9
6.0
10.5
m
Nominal inverse load current (Pins 1,2,6,7 to Tab)
VON = -0.5 V, Tc = 85 °C11
IL(inv)
55
70
--
A
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
-
VON
--
0.6
--
V
Operating Parameters
Operating voltage (
VIN = 0) 9,
13
)
Vbb(on)
5.0
--
34
V
Undervoltage shutdown
14
)
VbIN(u)
1.5
3.0
4.5
V
Undervoltage start of charge pump
see diagram page 15
VbIN(ucp)
3.0
4.5
6.0
V
Overvoltage protection
15
)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
VbIN(Z)
60
62
--
66
--
--
V
Standby current
Tj =-40...+25°C:
IIN = 0
Tj = 150°C:
Ibb(off)
--
--
15
25
25
50
µA
13
)
If the device is turned on before a V
bb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)
VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and
VOUT ≈Vbb - 3 V.
15
)
See also
VON(CL) in circuit diagram on page 9.


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