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BTS650P Datasheet(PDF) 11 Page - Siemens Semiconductor Group |
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BTS650P Datasheet(HTML) 11 Page - Siemens Semiconductor Group |
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11 / 16 page  BTS650P Semiconductor Group Page 11 1998-Nov.-2 Options Overview Type BTS 550P 650P 555 Overtemperature protection with hysteresis XX Tj >150 °C, latch function 23 ) Tj >150 °C, with auto-restart on cooling X X Short circuit to GND protection switches off when VON>6 V typ. (when first turned on after approx. 180 µs) XX Overvoltage shutdown -- Output negative voltage transient limit to Vbb - VON(CL) XX to VOUT = -19 V typ X 24) X24) 23 ) Latch except when V bb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠ 0 V only if forced externally). So the device remains latched unless V bb < VON(SC) (see page 5). No latch between turn on and td(SC). 24 ) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output. |
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