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BTS550P Datasheet(PDF) 3 Page - Siemens Semiconductor Group

Part # BTS550P
Description  Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
Download  15 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS550P Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Preliminary Data Sheet BTS550P
Semiconductor Group
Page 3
1998-Aug-31
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case:
RthJC7)
--
--
0.35
K/W
junction - ambient (free air):
RthJA
--
30
--
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 6)
IL = 20 A, Tj = 25 °C:
VIN = 0, IL = 20 A, Tj = 150 °C:
RON
--
3.3
6.4
4.0
7.8
m
IL = 120 A, Tj = 150 °C:
--
8
Vbb = 6V8), IL = 20 A, Tj = 150 °C: RON(Static)
--
9
12
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7:
VON = 0.5 V, Tc = 85 °C 10)
IL(ISO)
80
97
--
A
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 12
VON = 1.8 V, Tc = 150 °C:
IL(Max)
350
180
--
--
--
--
A
Turn-on time11)
IIN
to 90%
VOUT:
Turn-off time
IIN
to 10%
VOUT:
RL = 1
, Tj =-40...+150°C
ton
toff
140
40
--
--
600
150
µs
Slew rate on 11) (10 to 30%
VOUT )
RL = 1
Ω ,Tj =25°C
d
V/dton
--
0.45
--
V/
µs
Slew rate off 11) (70 to 40%
VOUT )
RL = 1
Ω ,Tj =25°C
-d
V/dtoff
--
0.55
--
V/
µs
7)
Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8
)
Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9)
Not tested, specified by design.
10) TJ is about 105°C under these conditions.
11
) See timing diagram on page 13.
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see diagram on page 9
Tj = 150 °C:
RON(inv)
--
3.3
6.4
4.0
7.8
m
Nominal inverse load current (Pins 1,5 to Tab)
VON = -0.5 V, Tc = 85 °C10
IL(inv)
80
97
--
A
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
-
VON
--
0.8
--
V


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