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BTS550P Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BTS550P Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 15 page Preliminary Data Sheet BTS550P Semiconductor Group Page 3 1998-Aug-31 Thermal Characteristics Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: RthJC7) -- -- 0.35 K/W junction - ambient (free air): RthJA -- 30 -- Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 6) IL = 20 A, Tj = 25 °C: VIN = 0, IL = 20 A, Tj = 150 °C: RON -- 3.3 6.4 4.0 7.8 m Ω IL = 120 A, Tj = 150 °C: -- 8 Vbb = 6V8), IL = 20 A, Tj = 150 °C: RON(Static) -- 9 12 Nominal load current9) (Tab to pins 1,5) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10) IL(ISO) 80 97 -- A Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 °C: see diagram on page 12 VON = 1.8 V, Tc = 150 °C: IL(Max) 350 180 -- -- -- -- A Turn-on time11) IIN to 90% VOUT: Turn-off time IIN to 10% VOUT: RL = 1 Ω , Tj =-40...+150°C ton toff 140 40 -- -- 600 150 µs Slew rate on 11) (10 to 30% VOUT ) RL = 1 Ω ,Tj =25°C d V/dton -- 0.45 -- V/ µs Slew rate off 11) (70 to 40% VOUT ) RL = 1 Ω ,Tj =25°C -d V/dtoff -- 0.55 -- V/ µs 7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! 8 ) Decrease of Vbb below 10 V causes a slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C. 9) Not tested, specified by design. 10) TJ is about 105°C under these conditions. 11 ) See timing diagram on page 13. Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 20 A Tj = 25 °C: see diagram on page 9 Tj = 150 °C: RON(inv) -- 3.3 6.4 4.0 7.8 m Ω Nominal inverse load current (Pins 1,5 to Tab) VON = -0.5 V, Tc = 85 °C10 IL(inv) 80 97 -- A Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C - VON -- 0.8 -- V |
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