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BTS426L1 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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BTS426L1 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 13 page BTS 426 L1 Semiconductor Group 3 Electrical Characteristics Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: Tj=150 °C: RON -- 50 100 60 120 m Ω Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C IL(ISO) 5.8 7.0 -- A Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 IL(GNDhigh) -- -- 10 mA Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C ton toff 80 80 200 230 400 450 µs Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C d V /dton 0.1 -- 1 V/ µs Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C -d V/dtoff 0.1 -- 1 V/ µs Operating Parameters Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V Undervoltage restart Tj =-40...+25°C: Tj =+150°C: Vbb(u rst) -- -- 5.0 7.0 V Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150°C: Vbb(ucp) -- 5.6 7.0 V Undervoltage hysteresis ∆V bb(under) = Vbb(u rst) - Vbb(under) ∆V bb(under) -- 0.2 -- V Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 -- 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 -- -- V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.5 -- V Overvoltage protection7) Tj =-40...+150°C: Ibb=40 mA Vbb(AZ) 42 47 -- V Standby current (pin 3) VIN=0 Tj=-40...+25°C: Tj= 150°C: Ibb(off) -- -- 10 12 25 28 µA Leakage output current (included in Ibb(off)) VIN=0 IL(off) -- -- 12 µA 6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 7) See also VON(CL) in table of protection functions and circuit diagram page 7. |
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