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RBQ30T65A Datasheet(PDF) 1 Page - Rohm |
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RBQ30T65A Datasheet(HTML) 1 Page - Rohm |
1 / 5 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RBQ30T65A lApplications lDimensions (Unit : mm) lStructure General rectification lFeatures 1)Cathode common type. 2)Low IR 3)High reliability lConstruction Silicon epitaxial planer Symbol Unit VRM V VR V Io A IFSM A Tj °C Tstg °C Symbol Min. Typ. Max. Unit Conditions VF - - 0.69 V IF=15A IR - - 450 μA VR=65V lAbsolute maximum ratings (Tc=25 C) lElectrical characteristics (Tj=25 °C) (*1) Rating of per diode : Io/2 Storage temperature -40 to +150 Average rectified forward current (*1) 30 Forward current surge peak (60Hz・1cyc) 100 Junction temperature 150 Parameter Limits Reverse voltage (repetitive) 65 Reverse voltage (DC) 65 Reverse current Parameter Forward voltage ROHM : TO220FN ① 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 ① Manufacture Date 1/4 2011.11 - Rev.A |
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